Abstract
A NiO/Al0.1Ga0.9N heterojunction structure was prepared using aqueous method. It was composed of NiO nanosheets and Al0.1Ga0.9N film. The device based NiO/Al0.1Ga0.9N heterojunction structure was sensitive to ultraviolet (UV) light illumination. It showed fast decay time of 34 ms and rise time of 30 ms. Moreover, high responsibility of 0.65 A W−1 was achieved at 365 nm UV illumination. The results showed high performance NiO/AlGaNheterojunction UV-photodetector can be obtained using simple way. Meanwhile, it may be promising candidates for novel nanostructures design and high performance device fabrication.
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