Abstract
A NiO/Al0.1Ga0.9N heterojunction structure was prepared using aqueous method. It was composed of NiO nanosheets and Al0.1Ga0.9N film. The device based NiO/Al0.1Ga0.9N heterojunction structure was sensitive to ultraviolet (UV) light illumination. It showed fast decay time of 34 ms and rise time of 30 ms. Moreover, high responsibility of 0.65 A W−1 was achieved at 365 nm UV illumination. The results showed high performance NiO/AlGaNheterojunction UV-photodetector can be obtained using simple way. Meanwhile, it may be promising candidates for novel nanostructures design and high performance device fabrication.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.