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Abstract
Tunnelling junctions which had an epitaxial Nb base electrode grown on a sapphire substrate with a Ta overlayer were studied. X-ray diffraction and resistance measurements revealed that the overlayer Ta was in the bcc phase and had good crystallinity. To investigate the coverage of the Ta layer, the surface morphology was observed by atomic force microscopy and was compared with that of the Al overlayer. We successfully fabricated Nb/Ta - O/Ta/epitaxial Nb junctions with a Josephson critical current of . These junctions showed relatively large excess currents at the subgap voltage region.
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