Abstract
Crack-free Nb-doped Bi 4Ti 3O 12 (Nb-BIT-p) ferroelectric thin films were fabricated utilizing nonionic block copolymer, HO(CH 2CH 2O) 20(CH(CH 3)CH 2O) 70(CH 2CH 2O) 20H (EO 20PO 70EO 20), on Pt/Ti/SiO 2/Si substrates by a processing route of metalorganic solution deposition. The Nb-BIT-p films after calcination showed only a Bi 4Ti 3O 12-type crystalline phase with a random orientation and small grains (< 0.4 μm). The remanent polarization (2 P r) and the coercive field ( E c) values of Nb-BIT-p capacitors were unusually high, such as 42 ± 3 μC/cm 2 and 72 ± 5 kV/cm, respectively, at a maximum applied field of 160 kV/cm. After 1.5 × 10 10 read/write cycles with ± 8 V amplitude (160 kV/cm) at 1 MHz frequency, the 2 P r value was partially reduced, but recoverable close to the original one by repeated switching at a high field.
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