Fabrication of nanostructured silicon surface using selective chemical etching

Abstract

A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10–12 M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the p-type silicon is two times greater than the formation rate in the n-type silicon.