Abstract
In this work, we have demonstrated that the nanocrystal created by combining the self-assembled block copolymer thin film with regular semiconductor processing can be applicable to non-volatile memory device with increased charge storage capacity over planar structures. Self-assembled block copolymer thin film for nanostructures with critical dimensions below photolithographic resolution limits has been used during all experiments. Nanoporous thin film from PS-b-PMMA diblock copolymer thin film with selective removal of PMMA domains was used to fabricate nanostructure and nanocrystal. We have also reported about surface morphologies and electrical properties of the nano-needle structure formed by RIE technique. The details of nanoscale pattern of the very uniform arrays using RIE are presented. We fabricated different surface structure of nanoscale using block copolymer. We also deposited Si-rich SiNx layer using ICP-CVD on the silicon surface of nanostructure. The deposited films were studied after annealing. PL studies demonstrated nanocrystal in Si-rich SiNx film on nanostructure of silicon.
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