Fabrication of Nanoscale PtO[sub x]∕PZT∕PtO[sub x] Capacitors by E-beam Lithography and Plasma Etching with Photoresist Mask

Abstract

Nanoscaling of PtO x /Pb(Zr x Ti 1-x )O 3 (PZT)/PtO x capacitors in well-ordered arrays down to a cell size of 90 X 90 nm was sucessfully achieved by electron-beam lithography and plasma etching with photoresist mask. Fast etch of PtO x and PZT layers was obtained with a rate of 165 nm/min in plasma of Ar/Cl 2 /10%O 2 and 240 nm/min in Ar/CF 4 /30%O 2 , respectively. The selectivity of PtO x to NEB resist was 5.8 and that for PZT was 4.3. Crystallization of PZT film and reduction of PtO x layer were also observed after post-annealing of the etched specimens. Direct electrical measurement reveals that a good polarization switching characteristic can be retained in the nanoscaled PZT capacitors.