Abstract
We demonstrated a deposition of nanometer-scale Zn dots using the selective photodissociation of adsorption-phase diethylzinc with a nonresonant optical near field, where the photon energy is lower than that of the absorption edge of gas-phase diethylzinc. We achieved nanometric prenucleation by dissociating diethylzinc molecules adsorbed on a substrate. Subsequent deposition was performed by dissociating the adsorbed molecules on the prenucleated Zn. The topographic image of the deposited Zn dot had a full width at half maximum (FWHM) of 25 nm. Furthermore, the photoluminescence intensity distribution from a single ZnO dot fabricated using laser annealing had a FWHM of 85 nm.
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