Fabrication of nanoimprint template in Si with high etch rate by non-switch DRIE process

Abstract

A non-switch deep reactive ion etching (DRIE) process for rapid fabrication of nanoimprint templates has been developed. High etch rate without the scalloping effect has been achieved using inductive coupling plasma (ICP) with gas mixture of SF6, C4F8, O2 and Ar. The dependences of etch rate, selectivity, and etch profile on chamber pressure, platen power, and the ratio of different gases in the gas mixture were investigated and optimized process conditions were established. Silicon line pattern of 100nm wide with the aspect ratio of 10:1 have been fabricated with the non-switch DRIE process. The fabricated template was used to imprint UV cured SU-8 photoresist.