Abstract
In this paper, we report the novel fabrication technique of Si nano-scale point contact channels on the silicon-on-insulator substrate. In our method, the width of the point contact channel is determined only by the thickness of the surface Si layer and the nano-scale channels can be fabricated without using any fine resolution lithography. By applying the method to the point contact channel metal-oxide-semiconductor field-effect-transistor (MOSFET), the electrical properties of the nano-scale channels are investigated. The experimental results show that uniform nano-scale point contact channels are successfully formed.
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