Abstract
AbstractWe grew Sb doped n+‐BaSi2 on p+‐Si(001) to form a tunnel junction using undoped BaSi2 templates by reactive deposition epitaxy (RDE). When the RDE growth duration was 30 s, the current became the largest. In addition, a 250‐nm‐thick undoped BaSi2 film was epitaxially grown on the tunnel junction for photoresponse measurement. Photocurrents, measured under the bias voltages between top and bottom electrodes, increased sharply at photon energies greater than 1.25 eV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
