Abstract
The integration of InAs/AlSb/GaSb resonant interband tunneling diodes (RITDs) with InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) is reported. The integrated devices exhibit nearly identical performance to discrete control devices from DC through microwave frequencies. RITDs with peak current densities of 24.5 kA/cm/sup 2/ and peak voltages of 0.12 V have been demonstrated for devices with 1.2-nm thick AlSb barriers. HEMTs with 0.2-/spl mu/m gates have been fabricated, and f/sub t/s of 127 GHz and f/sub max/ of 183 GHz have been obtained. To the authors' knowledge, this is the first report of the monolithic integration of RITDs with HEMTs on InP.
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