Abstract
Abstract Single-phase monoclinic Cu2SnS3 (M-CTS) thin films have a good tendency to obtain high conversion efficiency in photovoltaic devices. In this study, single-phase monoclinic Cu2SnS3 (M-CTS) thin films are prepared by a combination of sputtering and sulfurization processes. The M-CTS device shows a power conversion efficiency of 0.64% with an open-circuit voltage of 0.184 V, a short circuit current of 12.63 mA/cm2, and fill factor of 27.36. The required single-phase structure of M-CTS is confirmed by the X-ray diffraction and Raman spectroscopy. Quantitative analysis by a Rietveld refinement of the XRD patterns of CTS films reveal a monoclinic crystal structure. The M-CTS thin-film shows a compact morphology, direct optical bandgap of 0.95 eV, a thickness of ~1 μm, and electrical properties, including resistivity of 1.50 Ω-cm, hole mobility of 5.02 cm2/V, and carrier concentration of 8.30 × 1017 cm−3 with p-type conductivity. Based on these advantages, further studies are expected to drastically enhance the efficiency of M-CTS solar devices.
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