Abstract
Spinel MgAl2O4 thin films were deposited on MgO single-crystal substrates and epitaxial Fe (or Fe4N) thin films by RF-sputtering from a ceramic target. Epitaxial relationship was confirmed by X-ray diffraction analysis between the crystalline spinel MgAl2O4 films and the respective substrate and underlayers, while no diffraction peak was observed from the films deposited on amorphous substrates. Spin-valve type magnetic tunnel junctions (MTJs) with a stacking structure of Fe [Fe4N]/MgAl2O4/CoFeB/Ru/Fe/MnIr exhibited normal [inverse] tunnel magnetoresistance (TMR) effect, reflecting the sign of spin polarization of Fe [Fe4N]. The maximum magnitude of the TMR ratio obtained for the Fe-based and Fe4N-based MTJs was 67% and 18%, respectively. The resistance area product values of the MTJs were significantly larger than the reported values for the MTJs with a post-oxidized spinel MgAl2O4 barrier.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
