Abstract
Pt/SrBi2(Tai1-xNbx)2O9/Pt/IrOx/Ir capacitor was successfully fabricated up to metallization on poly silicon plug for Mega-bit FeRAM. The integration processes include CMP technique, buried TiN barrier structure and electrode technology for high thermal stability, low temperature process for SBTN film. The thickness of iridium layer was the most important factor in controlling the contact resistance of the poly silicon plug. Pt/IrOx thickness also affected the contact resistance. But the RTO treatment of the TiN barrier layer did not change the contact resistance. The best contact resistance of the plug was about 2kΩ/plug in the maximum process temperature of 750°C, 3min in oxygen ambient at the contact size of 0.30 Ωm in diameter. Hysteresis curves of the SBTN capacitor were obtained after metallization. The switching polarization was about 10μC/cm2, and capacitor size dependency of the polarization was not observed in the range of 0.30 μm2 ∼25 μm2
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