Abstract
We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu cm−3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350 °C, indicating that bcc Co3Mn alloys have relatively high spin polarization.
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