Abstract
X-ray mirrors consisting of Si/Si 3N 4 layer pairs were deposited using ion beam assisted deposition. The Si was deposited by e-beam evaporation, and Si or Si 3N 4 were produced by closing or opening, respectively, a computer-controlled shutter over a Kaufman nitrogen ion source while Si evaporation proceeded. Mirrors were produced with 2 d spacings between 50 and 100 Å. Excellent diffraction intensities, linewidth and peak reflectivities were obtained, demonstrating that ion beam assisted deposition is a highly reliable and straightforward technique for reproducible X-ray mirror production.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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