Abstract
A novel approach for fabricating low-temperature poly-Si (LTPS) thin film transistors (TFTs) with self-aligned graded lightly doped drain (LDD) structure was demonstrated. The self-aligned graded LDD structure was formed by side-etching the Al gate under the photoresist followed by excimer laser irradiation for dopant activation and lateral diffusion. The graded LDD poly-Si TFTs exhibited low-leakage-current characteristics without significantly sacrificing driving capability due to the graded dopant distribution in the LDD regions, in which the drain electric field could be reduced. The leakage current of 1 μm graded LDD LTPS TFTs at Vds = 5 V and Vgs = -10 V could reach below 1 pA/μm, and the on/off current ratio at Vds = 5 V exceeded 10 7 .
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