Abstract
A new fabrication method to produce low residual stress PECVD SiNx layers at high frequency (13.56 MHz) was developed. High frequency up to 60W is employed in this new method to fabricate low stress SiNx. By adjusting the composition of reactant gases, process vacuum and the chamber temperature, the residual stress can be lower to-0.28 MPa, and high deposition rate up to 240 nm/min can be achieved. In addition, this paper investigated the influence of other important parameters on the results, such as pressure, power and gases flow rates. Moreover, by using the optimal process, the refractive index is ranged from 1.98 to 2.20, and the uniformity of run to run wafers is about ±3% for 4 inch wafers. Finally, a typical FBAR (film bulk acoustic wave resonator) structure using these low stress PECVD SiNx layers as solid layer and mask indicated that these layers are compatible in IC technology and suitable for using in fabricating MEMS(microelectromechanical systems) devices.
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