Abstract
By applying the well known techniques of the planar process: oxide passivation, photo engraving and ion implantation, Si pn-junction detectors were fabricated with leakage currents of less than 1 nA cm −2/100 ωm at room temperature. Best values for the energy resolution were 10.0 keV for the 5.486 MeV alphas of 241Am at 22°C using 5 × 5 mm 2 detector chips.
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