Abstract
We attempted to fabricate patterns having low line edge roughness (LER) by photo-nanoimprint for evaluation of critical dimension (CD) atomic-force microscopy (AFM). In order to fabricate the transparent low LER mold, we used spin on glass (SOG) imprinted using a low LER Si master mold made by anisotropic wet etching. We investigated SOG imprint properties as a function of pattern size. For patterns less than 0.5 µm wide, we formed the patterns on SOG having the same depth as the corresponding pattern height on the mold. Detailed observation showed that patterns broadened for outermost lines in line-and-space patterns where the Si master mold was not pushed perpendicularly into the SOG layer. We fabricated patterns on SOG molds 180 nm high and 100 nm wide and having a 200 nm period. Photo-nanoimprint was carried out using the SOG mold, and the LER of patterns on a photocurable polymer was 0.74 nm, comparable to that of the Si master mold.
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