Abstract
Ferroelectric Pb(Fe1/2Nb1/2)O3 (PFN) films were heteroepitaxially grown on Si (100) substrates by pulsed laser deposition. The optimum conditions to form the (100) oriented PFN perovskite phase were at a substrate temperature of 700°C with an oxygen pressure of 200 mTorr. The Pb content in the target was found to be essential to the formation of the perovskite phase in PFN films. Heterostructures consisting of PFN/La0.5Sr0.5CoO3 (LSCO) films were prepared on Si (100) substrates to evaluate the dielectric and ferroelectric properties of the films. Ferroelectricity in these films was confirmed by the presence of hysteresis loops, with a remnant polarization of 0.2 µC/cm2 and coercive field of 5.12 kV/cm. The room-temperature dielectric constant measured at 10 kHz was 194 and the dissipation factor was 0.7.
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