Abstract
A buried conductive layer in GaAs was formed using a low-energy focused ion beam (FIB) and molecular beam epitaxy (MBE) combined system. The sheet carrier density of the structure was measured as a function of ion dose ranging from 2×1012 to 5×1013 cm−2 and postrapid thermal annealing time at 800 °C. It was shown that implanted Si ions at an ion energy of 200 eV and an ion dose of 2×1012 to 1×1013 cm−2 can be fully activated by choosing an optimum annealing condition. Present results suggest the possibility of fabricating a high quality two-dimensional electron gas (2DEG) layer in the laterally selected area in GaAs and GaAs/AlGaAs systems.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
