Abstract
Lateral resonant tunneling transistors have been fabricated in the InAlAs/InGaAs material system lattice matched to InP. Lateral tunnel barriers are formed in the plane of a two-dimensional electron gas confined at a modulation-doped heterointerface by depletion regions induced by top-contact metal gates. The device is structurally similar to a dual-gate modulation-doped field effect transistor with nanoscale gates. The metal gates are written by e-beam lithography. Device results include multiple negative differential resistance peaks for temperatures as high as 20 K. Using the substrate as a backgate, multiple regions of negative transconductance are also observed.
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