Abstract
We report the first demonstration of a lateral heterojunction bipolar transistor realised using selective area epitaxy to grow the emitter and collector structures. The transistor had a gain of 2 at a current density of 2 kA cm−2. The low current gain is directly attributable to the base width used in this novel structure and does not result from the regrown junctions which exhibited an ideality factor of 1.6.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
