Abstract
Local doping with focused laser beam writing was used to fabricate lateral npn- and pnp-structures on modulation-doped Si/SiGe heterostructures. The electrical and optical properties of the achieved lateral potential modulation were analyzed for local B-doping on n-type Si/SiGe and P- and Sb-doping on p-type SiGe/Si. Focused laser beam written doped lines show a strongly nonohmic IV characteristic indicating the formation of a local insulating barrier in the two-dimensional carrier system. Such lateral structures can be used as photosensitive devices with responsivities up to 106 A/W combined with a spatial resolution on the μm scale.
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