Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

Yichen Zhang,Rui Hao,Mingjin Zhang,Qingliang Feng

doi:10.3390/electronics11060838

Abstract

A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.

Highlights

High-temperature short-wave infrared (SWIR) photodetectors are becoming increasingly significant as sensors in space exploration, night vision, and fire safety [1–6]
We have developed high-performance SWIR array photodetectors with hightemperature tolerance based on chemical vapor deposition grown PtS2 films of continuous large-area
The results demonstrated that completely reacted withreacted sulfur gas turned into PtS2 film

Summary

Introduction

High-temperature SWIR photodetectors are becoming increasingly significant as sensors in space exploration, night vision, and fire safety [1–6]. Due to the synergistic effect of strong electron scattering, low carrier mobility in normal semiconductors, and increased working temperature, the effective photocurrent (Iph ) is quite faint for imaging or target identification [7–10]. High mobility, high quality, and wide spectra response are key factors for the generation of SWIR photodetectors with high temperature tolerance [17–20]. PtS2 has a layer-dependent bandgap from 1.6 eV of monolayer to 0.25 eV of bulk [23,24]. The temperature-dependent conductance and mobility of a few PtS2 layers show a direct metal-to-insulator transition and carrier scattering [25,26], and the theoretical mobility of PtS2 crystals is anticipated to be as high as 1000 cm V−1 s−1 at room temperature [23,27,28]. The smaller temperature coefficient of PtS2 has shown to be of great advantage in optoelectronic and thermoelectric devices [32,33]

Methods

Discussion

Conclusion