Fabrication of Ion-Implanted Si Nanowire p-FETs

Abstract

We have successfully demonstrated p-type silicon nanowire field-effect transistors (Si NW p-FETs) prepared using B-ion implantation with a dose of 1 × 1013 ions/cm2 and an energy of 10 keV. The experimental ID−VDS characteristics for B-implanted Si NW FETs revealed a clear p-channel FET behavior with a hole mobility of ∼6.9 cm2/(V·s), a hole concentration of ∼1.1 × 1019 cm−3, and a transconductance of ∼29 nS/μm at a VDS of 0.1V. The B-implanted Si NWs were annealed at a temperature of 950 °C for 30 and 60 s. The 2D-ATHENA and ATLAS software were used to accurately simulate the device fabrication process and the electrical performance, respectively.