Abstract
The conventional monolithic integration of silicon PIN detector as △E-E telescope suffer from incompatibility with IC process, signal crosstalk, high cost, etc.. In this paper, integrated silicon PIN detector based on Al-Sn-Al bonding is proposed. The intermediate conductive layer between thin and thick PIN structure comprises of metallic bonding layer, which can reduce the signal crosstalk. Moreover, the novel integration process enables known-good-die (KGD) bonding of thin and thick PIN structure, which increases flexibility and reliability of the fabrication process. Besides, the fabrication reduces the cost and increases reliability by utilizing silicon integrated process.
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