Abstract
It is shown that reactive ion etching can be used for mesa etching and selfaligned contact cap removal in InP/InGaAs photodiode fabrication, without inducing unacceptable diode leakage currents. Mesa diodes with ̃100nA leakage, 90% quantum efficiency, and 12 GHz bandwidth at 5 V bias and 1.3μm wavelength, and pairs and quadruplets of such detectors for coherent lightwave systems are demonstrated.
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