Abstract
InGaN-based light-emitting diodes (LED) with an embedded air-gap disk structure were fabricated using a laser drilling process and an electrochemical (EC) wet etching process. The disk-shaped air-gap structure was formed surrounding the laser-drilled hole as a reflective structure to enhance the light extraction efficiency. The light output power of the treated LED structure was enhanced by 22% compared with a conventional LED at 20 mA. High light emission intensity of the treated LED structure was observed at the 40-µm-diameter embedded air-disk patterns in the mesa region. The InGaN LED structures with the laser-drilling holes and embedded air-disks can reduce the light trapping effect and increase the light extraction efficiency in the device’s central mesa region.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
