Abstract
InGaAsP double shallow ridge rectangular ring laser photonics integration circuits have been successfully fabricated by cascade etching technique. Varied thresholds with coupling current Ic and coupling length Lc are observed. The lowest threshold current of 75 mA, including Ic and Id, at Ic = 30 mA in the device of Lc = 300 mum is obtained. The device of Lc = 200 mum exhibits single-mode operation with sidemode suppression ratio = 15 dB and Q = 6513 just beyond the threshold. The cascade etching technique is of interest for fabrication of other multilayer monolithic photonic integration circuits.
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