Abstract
Hydrogenated amorphous silicon carbide films have been fabricated by the decomposition of hexamethyldisilane with a microwave discharge flow of Ar. Mechanically hard films were obtained by applying radio-frequency (RF) bias voltages to the substrate. The atomic compositions of the films were analyzed by a combination of Rutherford backscattering and elastic recoil detection, X-ray photoelectron spectroscopy (XPS), and glow discharge optical emission spectroscopy. The chemical structure was analyzed by carbon-K near-edge X-ray absorption fine structure spectroscopy, high-resolution XPS, and Fourier transform infrared absorption spectroscopy. The structural changes upon the application of RF bias were investigated, and the concentration of O atoms near the film surface was found to play a key role in the mechanical hardness of the present films.
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