Abstract
AbstractHighly stacked InAs quantum dots (QDs) were grown on vicinal (001) InP substrates by the strain‐compensation technique. The vicinal surface and As2 flux played important roles in changing quantum dashes into QDs on the (001) surface. Strain compensation was employed to stack 30 layers of QDs without degrading the quality of the crystal. In addition, the QDs exhibited strong photoluminescence emission at 1.55 µm and room temperature. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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