Fabrication of highly sensitive visible photodetector based on SnS2 Terrazzo-like structure for weak signal detection

Abstract

Chemically inert and van der Waal-structured tin-disulfide (SnS2) has become a potential candidate for optoelectronics due to its ultra-sensitivity and high performance resulting from high light absorption coefficient and thickness-dependent electrical properties. We report the facile synthesis of SnS2 Terrazzo-like structure using the CVD technique. A highly responsive MSM SnS2-based device is designed to detect optical radiation ranging from 300 to 800 nm. The fabricated device exhibits excellent responsivity (external quantum efficiency) of 2240 mAW−1 (522%) under 532 nm wavelengths for a 5 μW optical signal. The other merits, like detectivity and noise equivalent power, are 1.4 × 1010 Jones and 2.6 × 10−12 WHz−1/2, respectively, with a linear dynamic range (LDR) of ∼41 dB. The low LDR plays a vital role in evaluating light intensity from the corresponding generated photocurrent. The weak optical signal detection capability of SnS2-based photodetector paves the way for its application in astronomy, communication systems, and biomedical imaging.