Fabrication of highly conducting undoped ZnO ceramics by flash sintering

Abstract

Highly conducting undoped ZnO ceramics were fabricated by flash sintering using commercial pure ZnO powder as a model system. The flash-sintered samples with diameters of 15 mm and heights of 2 mm exhibited relative densities ranging from 93.6% to 97.1% and room-temperature electrical conductivities between 205 and 590 S/cm. X-ray diffraction and Raman spectra indicated a high concentration of oxygen vacancies and zinc interstitials in the flash-sintered samples, increasing the carrier concentration. Detailed microstructural analyses show that clean grain boundaries and the morphology and distribution of impurities in flash-sintered samples are favorable for improving carrier mobility. Additionally, flash sintering has the advantage of reducing conditions, which reduces acceptor defects at ZnO grain boundaries, lowers Schottky barriers, and increases carrier mobility. The results show that flash sintering can synergistically enhance the carrier concentration and mobility in ZnO ceramics, making it a promising technique for fabricating highly conducting ZnO ceramics.