Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure

Abstract

Two types of high‐voltage flip chip deep ultraviolet light emitting diodes (HV‐FC DUV‐LEDs) are constructed with 2 × 2 and 3 × 3 cells, respectively, in which each single cell is fabricated with inclined sidewalls covered by SiO2/Al. The simulation results suggest that the structure with inclined sidewalls is much favorable to extract the transverse magnetic‐polarized lights. As a result, the light power as high as 145.7 mW is achieved in HV‐FC DUV‐LED constructed with 3 × 3 cells at 1000 mA.