Abstract
A method is described for fabricating high-sensitivity thin film of InSb. The fabrication procedure consists of the sequential deposition of chromium, antimony and indium. The films are then heat treated to thermo-chemically produce polycrystalline InSb films. The free-electron mobility of these films is found to be 5.4 × 10 4 cm 2/V. sec, and the free carrier density to be 10 16 cm −3. Magnetoresistors were fabricated from these films with addition of indium, Hall-voltage shorting strips. The magnetoresistance sensitivity of these resistors was found to be 45 per cent K G, which compares very favourably with that obtained from single crystal InSb resistors.
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