Fabrication of high sensitive and fast response MIR photodetector based on a new hybrid graphene structure

Abstract

Electronic structure and morphology variation in a novel synthesized surface modified graphene from both experimental results and calculations based on ab-initio density functional theory results has been presented in this paper. The results indicate that modification of surface of graphene using organic molecule (thiosemicarbazide) causes sheet strain which results morphology and band structure variations. Therefore, tuning of the graphene band gap could be achieved by surface modification using organic molecule which is required in electronic device applications. Here, modified graphene is used as Mid IR detector and the results are compared with unmodified graphene-based detector. Improved detection parameters such as fast response time (three orders of magnitude faster than those reported in the literature), high sensitivity, low dark current and electrical stability are achievable for modified graphene-based fabricated detectors. These improvements are obtained because of introducing electron trapping centres and creating a bandgap in graphene through band structure engineering.