Abstract
We have fabricated stacked Josephson junctions from a double trilayer structure deposited sequentially with the intermediate Nb layer slightly thicker than λ L . The lower electrode geometry was patterned by a sequence of Reactive Ion Etching and sputter-etching operations, while the junctions were defined by anodic oxidation of the top and the intermediate electrodes. We measured from the I-V characteristic the quasiparticle losses, finding V m ⋍65 mV. Moreover we found that the critical currents in the two junctions of each stack are similar within less than ten percent and the magnetic field patterns are very regular.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
