Abstract
We present investigations on InSb nanowires grown directly on InSb substrates. A chemical beam epitaxy system was used to synthesize InSb nanowires. Growth at low temperatures (300−400 °C) resulted in extensive parasitic InSb thin film deposition and stacking faults within these nanowires. To circumvent both problems, InSb nanowires were synthesized at temperatures above 410 °C. By further optimizing the growth parameters completely stacking fault-free, free-standing InSb nanowires were obtained. By combining chemical beam epitaxy and laser interference lithography, large areas of ordered InSb nanowires were fabricated. Temperature-dependent electrical measurements on these InSb nanowire arrays showed intrinsic bulklike behavior.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
