Abstract
We fabricated randomly oriented polycrystalline BaSi2 films on TiN metal layers by sputtering for the deployment of BaSi2 solar cells on a flexible substrate. The formation of BaSi2 films was demonstrated by X-ray diffraction and Raman spectroscopy. Photoresponsivity increased at wavelengths <1000 nm, corresponding to the band gap of BaSi2, and reached 1.6 A W−1 at a wavelength of 650 nm under a bias voltage of 0.5 V applied to the front ITO electrode with respect to the TiN layers. This value is equivalent to the highest value ever achieved for undoped BaSi2 epitaxial films grown by MBE.
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