Abstract
We have demonstrated high-performance InGaAsN triple-quantum-well ridge waveguide (RWG) lasers fabricated using pulsed anodic oxidation. The lowest threshold current density of 675 A/cm/sup 2/ was obtained from a P-side-down bonded InGaAsN laser, with cavity length of 1600 /spl mu/m and contact ridge width of 10 /spl mu/m. The emission wavelength is 1295.1 nm. The transparency current density from a batch of unbonded InGaAsN RWG lasers was 397 A/cm/sup 2/ (equivalent to 132 A/cm/sup 2/ per well). High characteristic temperature of 138 K was also achieved from the bonded 10/spl times/1600-/spl mu/m/sup 2/ InGaAsN laser.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
