Abstract
Successful fabrication process of high-k/Ge with GeO2 interlayer has been proposed. Low temperature oxidation of Ge substrate gave rise to no GeO desorption at GeO2/Ge interface, that maintains the interface property to be good except a large VFB shift. Deposition of component metals of high-k material on the GeO2/Ge structure was effective to improve the VFB shift with low temperature annealing. Therefore, low temperature oxidation annealing of metal on GeO2/Ge structure has been expected to fabricate high-k/GeO2/Ge with good interface property. In case of Al2O3/GeO2/Ge, this prediction has been proved. In case of HfO2/GeO2/Ge, however, during the thermal treatment the Hf metal diffuse into Ge substrate which causes the formation of the hillocks. The good characteristic was obtained by preventing the hillocks being formed.
Published Version
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