Abstract
We examined the impact of surface chemical nature prior to atomic layer deposition (ALD) to the electrical properties of high-k gate stacks on Si substrates. We confirmed that poor electrical film quality in ALD-HfO2 fabricated on H-terminated surfaces is drastically improved by changing the surface species terminating topmost Si bonds to be hydrophilicized. Especially, the high-k gate stacks fabricated on the surfaces chemically controlled by “oxygen-termination” technique showed excellent interfacial electrical quality without creating thick interfacial SiO2 layer.
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