Abstract
Aluminum-induced crystallization (AIC) has been used to achieve device quality nc-Si thin films, at annealing temperatures ranging from 300 to 450 °C, exhibiting electronic properties favourable for piezoresistive microelectromechanical systems sensor application. The nc-Si films obtained by AIC at an annealing temperature of 400 °C showed hole concentration of the order of 1018 cm−3 and the Hall mobility was measured to be 13.5 cm2V−1s−1. The films were subjected to piezoresistive gauge factor measurement and a gauge factor of 43 was recorded in the longitudinal mode under a sample scheme of constant force over the entire sample area, which is the highest reported to date for thin film nc-Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
