Abstract
Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.
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