Abstract
Single-heterostructure crystals of a series of halogen-bridged quasi-one- dimensional mixed-valence transition metal complexes (HMMCs) were fabricated by selective coordination epitaxial growth (SCE growth). The overgrowth crystals of the HMMC were grown on the columnar crystals of the substrate HMMC in solution. The single-heterostructure crystals were epitaxially grown only when the two HMMCs had similar crystal structures. If their crystal structures were different, no heterostructure crystal was grown. This result suggests that the degree of mismatch between the crystal structures of the substrate and the overgrowth is the predominant factor which determines the SCE growth of the HMMCs.
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