Abstract
ABSTRACTNitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content.
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