Fabrication of heteroepitaxial Si films on sapphire substrates using mesoplasma CVD

Abstract

Heteroepitaxial silicon films have been deposited on (1102) oriented sapphire substrates by mesoplasma chemical vapor deposition (MPCVD) at various substrate temperatures. At a temperature of 600 °C, the film was obtained at a relatively fast deposition rate of 6 nm/s, and the deposition rate further increased to 8.3 nm/s at higher temperature of 770 °C. This is an evidence of the advantage of the MPCVD for low temperature and high rate deposition compared to other heteroepitaxial processes, such as MBE and thermal CVD.